Breakdown of equilibrium approximation for nanosecond laser-induced electron emission from silicon

Publication Type

Journal Article

Date Published

09/1998

LBNL Report Number

LBNL-42106

Abstract

We demonstrate that nonequilibrium carrier dynamics play a significant role in nanosecond laser-induced electron emission from semiconductor surfaces. Surface emission current and electron yields due to thermionic and photoelectric effects are calculated for a 2 ns laser pulse irradiation, with fluences below the threshold for melting. The photoelectric effect is found to dominate electron emission only at low fluences, whereas thermionic emission from interband absorption is responsible for electron emission at high incident fluences. The results present a satisfactory interpretation of experimental observations for nanosecond laser-induced electron emission from silicon.

Journal

Applied Physics Letters

Volume

73

Year of Publication

1998

Short Title

Appl. Phys. Lett.

Issue

10
1331

Pagination

1331-1333